Self-consistent characterization of gate controlled diodes for CMOS technology monitoring

We report a novel effective method for a comprehensive characterization of gate controlled diodes within an end of line CMOS process monitoring. The described technique is based on the simultaneous measurement of the gate current, the high frequency gate capacitance, and the drain current. It enables a rapid self-consistent determination of all relevant interface and near surface MOS parameters. In contrast to approaches described in the literature, the new method does not rely on the assumption of homogeneously doped samples. The practically relevant case of a doping profile in the near-surface device region is taken into account at the parameter extraction.