DocumentCode :
1904018
Title :
Gate Disturb Reduction in a Silicon Nanocrystal Flash EEPROM by Means of Natural Threshold Voltage Reduction
Author :
Swift, Craig T. ; Hoefler, Alex ; Kirichenko, Taras ; Muralidhar, Ramachandran ; Prinz, Erwin ; Rao, Rajesh ; Rinkenberger, Glenn ; Sadd, Michael ; Steimle, Robert
fYear :
2006
fDate :
2006
Firstpage :
56
Lastpage :
57
Keywords :
CMOS technology; Doping profiles; EPROM; Indium; Nanocrystals; Nonvolatile memory; Silicon; Substrates; Tellurium; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA, USA
Print_ISBN :
1-4244-0027-9
Type :
conf
DOI :
10.1109/.2006.1629492
Filename :
1629492
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1904018
