• DocumentCode
    1904050
  • Title

    Simulation of High Energy Implantation Profiles in Crystalline Silicon

  • Author

    Gong, L. ; Bogen, S. ; Frey, L. ; Jung, W. ; Ryssel, H.

  • Author_Institution
    Lehrstuhl fÿr Elektronische Baulelemente, Universitÿt Erlangen-Nÿrnberg, Artilleriestrasse 12, 8520 Erlangen. F.R.G.
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    495
  • Lastpage
    498
  • Abstract
    The sum of two normalized Pearson IV distributions has been used for describing the high energy implantation profiles with boron and phosphorus into crystalline silicon. The required range parameters for this description were extracted by fitting them to experimental SIMS-profiles. The number of range parameters can be reduced to five for both of boron and phosphorus.
  • Keywords
    Boron; CMOS process; CMOS technology; Crystallization; Implants; Ion implantation; Microelectronics; Parameter extraction; Power engineering and energy; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435146
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904050