Cycling behavior of nitride charge profile in NROM-type memory cells

Author

Furnemont, A. ; Rosmeulen, M. ; Van Houdt, J. ; Maes, H. ; De Meyer, K.

Author_Institution

IMEC, Leuven

fYear

2006

fDate

12-16 Feb. 2006

Firstpage

66

Lastpage

67

Abstract

Cycling of NROM-type memory cells leads to a dipolar distribution inside the nitride layer. This effect is due to a mismatch between hole and electron injected profiles resulting from conventional NROM operation. An extraction technique based on CP measurements allows the detailed observation of the mismatch. The proposed model explains the relation between the charge distributions and the cycling behavior which is experimentally confirmed by changing the programming and erasing conditions

Keywords

nitrogen compounds; read-only storage; semiconductor storage; CP measurements; NROM-type memory cells; charge distributions; charge-pumping measurements; cycling behavior; dipolar distribution; erasing conditions; extraction technique; nitride charge profile; nitride layer; programming conditions; Channel hot electron injection; Charge carrier processes; Charge pumps; Current measurement; Dielectric measurements; Electron traps; Electronic mail; Equations; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0027-9

Type

conf

DOI

10.1109/.2006.1629497

Filename

1629497