Title :
Voltage Ramp and Time-Dependent Dielectric Breakdown in Ultra-Narrow Cu/SiO2 Interconnects
Author :
Park, H. ; Lee, H.-B. ; Jung, H.-K. ; Choi, Z.-S. ; Bae, J.-Y. ; Hong, J.-W. ; Choi, K.-I. ; Park, B.-L. ; Lee, E.-J. ; Kim, J.-W. ; Lee, J.-M. ; Choi, G.H. ; Moon, J.T.
Author_Institution :
Process Development Team, Memory Division, Samsung Electronics Co., LTD., 445-701, KOREA, TEL: 82-31-208-4128 FAX: 82-31208-4799 E-mail: h06.park@samsung.com
Abstract :
Voltage ramp dielectric breakdown (VRBD) and time-dependent dielectric breakdown (TDDB) characteristics of ~40nm-wide Cu/SiO2 interconnect dielectrics were investigated. The addition of a SiH4 treatment before capping SiN deposition led to more uniform breakdown fields, and better TDDB performance. The integration of a Ti-based barrier resulted in the best uniformity of breakdown fields, and a dramatic enhancement of TDDB reliability. The relationship between the VRBD and the TDDB characteristics was discussed, and the effect of SiH4 treatment was analyzed using TEM.
Keywords :
Breakdown voltage; Dielectric breakdown; Electric breakdown; Electric variables measurement; Electrical resistance measurement; Fabrication; Logic devices; Random access memory; Silicon compounds; System testing;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546922
