DocumentCode :
1904470
Title :
Nonvolatile SRAM based on Phase Change
Author :
Takata, Masashi ; Nakayama, Kazuya ; Izumi, Takatomi ; Shinmura, Toru ; Akita, Junichi ; Kitagawa, Akio
Author_Institution :
Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ.
fYear :
2006
fDate :
12-16 Feb. 2006
Firstpage :
95
Lastpage :
96
Abstract :
We propose a novel architecture (phase change nonvolatile SRAM: PNSRAM) combining SRAM with PRAM. This architecture is possible solution to reduce the program cycle at the nonvolatile material to be divided a program sequence into volatile and nonvolatile. In this paper, we describe the PNSRAM architecture and a circuit simulation results of the volatile and nonvolatile operation
Keywords :
SRAM chips; memory architecture; phase change materials; PNSRAM architecture; circuit simulation; nonvolatile materials; nonvolatile operation; phase change nonvolatile SRAM; program sequence; volatile operation; Circuit simulation; Conductivity; Energy consumption; Leakage current; MOSFETs; Nonvolatile memory; Phase change random access memory; Random access memory; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
Type :
conf
DOI :
10.1109/.2006.1629510
Filename :
1629510
Link To Document :
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