Title :
Analytical Study of leakage characteristics change during multilevel interconnect process using porogen-type porous SiOC (k=2.4)/Cu system
Author :
Ohashi, N. ; Nakahira, J. ; Soda, E. ; Tomioka, K. ; Chikaki, S. ; Oda, N. ; Kondo, S. ; Saito, S.
Author_Institution :
Research Dept. 2, Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki-ken, 305-8569, Japan, Phone:+81-298-49-1282, Fax:+82-298-49-1186, E-mail: ohhashi.naohumi@selete.co.jp
Abstract :
The change in leakage I-V characteristics by multilevel processing of Cu interconnects with porogen-type p-SiOC (k=2.4) was investigated. Although the change can be eliminated by UV-cure condition, it was found that another process conditions can affect the leakage characteristics; the combination of NH3 plasma treatment after Cu-CMP and the additional UV-cure in multilevel process. It was also found that the influence of NH3 plasma damage on interface between p-SiOC and cap-CVD was decreased using low-pressure ion-reaction oriented trench etching (LP-RIE).
Keywords :
Aluminum; Dielectrics; Etching; Lead compounds; Metallization; Plasma applications; Plasma density; Plasma materials processing; Plasma properties; Wiring;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546925
