DocumentCode :
1904613
Title :
Development of low elastic modulus die attach material and clean cure process
Author :
Suzuki, Kenji ; Higashino, Takeshi ; Tsubosaki, K. ; Mine, K. ; Nakayoshi, K.
Author_Institution :
Hitachi Ltd., Tokyo
fYear :
1990
fDate :
20-23 May 1990
Firstpage :
835
Abstract :
Thermal stress in a large silicon die bonded to a copper lead frame was investigated using the finite-element method and a die-bonding experiment. It was found that even curing at a temperature as low as 100°C is not sufficient to reduce the thermal stress and that decreasing the Young´s modulus of the die-bond adhesive to less than 100 MPa is more effective than lowering the cure temperature. Based upon the calculation results, silicon elastomer with a hydrosilylation reaction curing mechanism was selected as a die-bond adhesive, considering both reliability and productivity. Volatile organic species such as cyclic siloxane were intensively removed from the adhesive to minimize contamination on the die surface. Furthermore, a clean curing process was developed to increase the process margin. The newly developed die-bond adhesive, together with the novel curing system, has enabled the bonding of a large die to a copper lead frame with good reliability and productivity. This technology has been applied to the assembly of memory device packages
Keywords :
adhesion; finite element analysis; integrated circuit manufacture; lead bonding; stress analysis; thermal stresses; Cu lead frame; Si-Cu; assembly; clean cure process; die attach material; die-bond adhesive; die-bonding experiment; finite-element method; hydrosilylation reaction curing mechanism; large Si die; low elastic modulus; memory device packages; productivity; reliability; silicon elastomer; Bonding; Contamination; Copper; Curing; Finite element methods; Microassembly; Productivity; Silicon; Temperature; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1990. ., 40th
Conference_Location :
Las Vegas, NV
Type :
conf
DOI :
10.1109/ECTC.1990.122286
Filename :
122286
Link To Document :
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