DocumentCode :
1904833
Title :
A GaAs HEMT MMIC Chip Set For Automotive Radar Systems Fabricated By Optical Stepper Lithography
Author :
Muller, J.-E. ; Bangert, A. ; Gravel, T. ; Karner, M. ; Riechert, H. ; Schafer, A. ; Siweris, H. ; Schleicher, L. ; Tischer, H. ; Verweyen, L. ; Kellner, W. ; Meier, T.
Author_Institution :
Siemens Corporate Research and Development
fYear :
1996
fDate :
3-6 Nov. 1996
Firstpage :
193
Lastpage :
196
Abstract :
A production oriented GaAs HEMT MMIC chipset for a 77 GHz FMCW automotive radar system is reported. It differs mainly in two aspects from the GaAs MMIC solutions described earlier: 0.12pm gatelength PHEMTs are fabricated by optical stepper lithography, a coplanar design is used. A fully passivated PHEMT fabrication process is reported with current-gain and power-gain cutoff frequencies exceeding 115 and 220 GHz, respectively. The design and performance of the chipset consisting of four different MMICs (VCO, harmonic mixer, transmitter, receiver) is described. The great potential of this MMIC approach to meet all system requirements of an automotive radar sensor in a cost effective and production oriented way is shown.
Keywords :
Automotive engineering; Gallium arsenide; HEMTs; Laser radar; Lithography; MMICs; Metal-insulator structures; Optical receivers; Optical transmitters; PHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-3504-X
Type :
conf
DOI :
10.1109/GAAS.1996.567867
Filename :
567867
Link To Document :
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