DocumentCode :
1905201
Title :
A Novel Technique for the Production of Thin Devices
Author :
Wilson, R. ; Gamble, H.S. ; Hudson, A.S.
Author_Institution :
Institute of Advanced Microelectronics, Queen´´s University of Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland, UK.
fYear :
1992
fDate :
14-17 Sept. 1992
Firstpage :
157
Lastpage :
160
Abstract :
A technique for the processing of silicon power devices on very thin substrates is presented, Using a handle wafer - device wafer approach and silicon direct bonding. An anisotropic etch is used to formn a waffle grid in the handle wafer, which then allows rear side processing of the device wafer. Sufficient strength is provided to allow reliable 5¿m thick device wafer processing. Very fast turm ON thyristor based devices have been made using this approach.
Keywords :
Board of Directors; Circuits; Diodes; Etching; Explosion protection; Microelectronics; Production; Silicon; Voltage; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
Print_ISBN :
0444894780
Type :
conf
Filename :
5435195
Link To Document :
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