A Novel Technique for the Production of Thin Devices

A technique for the processing of silicon power devices on very thin substrates is presented, Using a handle wafer - device wafer approach and silicon direct bonding. An anisotropic etch is used to formn a waffle grid in the handle wafer, which then allows rear side processing of the device wafer. Sufficient strength is provided to allow reliable 5¿m thick device wafer processing. Very fast turm ON thyristor based devices have been made using this approach.