Title :
Impact ionization phenomena in AlGaAs/GaAs HBTs
Author :
Di Carlo, A. ; Lugli, P. ; Pavan, P. ; Zanoni, E. ; Malik, R.
Author_Institution :
Schottky Institut and Physik Department, Technische Universitÿt Mÿnchen, Am Coulombwall, D-8046 Garching. Germany
Abstract :
Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
Keywords :
Charge carrier processes; Electrons; Extraterrestrial phenomena; Gallium arsenide; Heterojunction bipolar transistors; Impact ionization; Kirk field collapse effect; Microelectronics; Microwave devices; Monte Carlo methods;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
