Title :
Tunneling and Ionization Phenomena in GaAs Pin Diodes
Author :
Liebig, D. ; Lugli, R. ; Vogl, P. ; Claassen, M. ; Harth, W.
Author_Institution :
Schottky Institut and Physik Department, Technische Universitÿt Mÿnchen, Am Coulombwall, D-8046 Garching, Germany
Abstract :
We present a combined theoretical and experimental analysis of breakdown phenomena in GaAs pin diodes. The measured reverse characteristics indicating a soft breakdown for intrinsic regions smaller than 50nm are nicely interpreted via a self-consistent Monte Carlo simulation which allows the separation of tunneling an ionization processes.
Keywords :
Computational modeling; Current density; Current measurement; Diodes; Electric breakdown; Extraterrestrial phenomena; Gallium arsenide; Geometry; Impact ionization; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
