Title :
A 3mW continuous-time ΣΔ-modulator for EDGE/GSM with high adjacent channel tolerance
Author :
Schimper, Markus ; Dorrer, L. ; Riccio, Ettore ; Panov, Georgi
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
A continuous-time 4th-order multi-bit ΣΔ-modulator for GSM/EDGE is presented. By introduction of a direct feed-forward path from the input to the quantiser, high immunity to adjacent channel interferers is achieved. The dynamic range is 90 dB (>14-bit) over a 240 kHz signal bandwidth. Accurate modelling allows optimisation of excess loop delay, thus yielding a very low power consumption of 3 mW at 1.25 V supply voltage. The modulator is clocked at 26 MHz (oversampling ratio=54). It occupies 0.5 mm2 in a 0.13 μm CMOS technology.
Keywords :
CMOS integrated circuits; adjacent channel interference; cellular radio; feedforward; low-power electronics; radio receivers; sigma-delta modulation; 0.13 micron; 1.25 V; 240 kHz; 26 MHz; 3 mW; CMOS; EDGE receiver; GSM receiver; adjacent channel interferer immunity; adjacent channel tolerance; high-order ΣΔ-modulator; input/quantizer direct feed-forward path; loop delay; low power consumption; oversampled continuous-time sigma-delta modulators; oversampling ratio; Bandwidth; CMOS technology; Clocks; Delay; Dynamic range; Energy consumption; Feedforward systems; GSM; Semiconductor device modeling; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European
Print_ISBN :
0-7803-8480-6
DOI :
10.1109/ESSCIR.2004.1356648
