Title :
Phase Change Memory
Author :
Breitwisch, Matthew J.
Author_Institution :
IBM/Macronix PCRAM Joint Project, IBM T J Watson Research Center, Yorktown Heights, New York, USA, phone: 1-914-945-2348; email: breitm@us.ibm.com
Abstract :
This paper will give an introduction to the emerging technology of Phase Change Memory (PCM) and review the state of the art, focusing on basic phase change material properties, critical PCM device characteristics, PCM device scaling, reliability issues, and processing challenges.
Keywords :
Amorphous materials; Amorphous semiconductors; Crystallization; Electrodes; Nonvolatile memory; Phase change materials; Phase change memory; Phase change random access memory; Resistors; Temperature dependence;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546972
