Title :
Optically induced waveguiding in semiconductor optical amplifiers
Author :
Kutsche, C. ; LiKamWa, P. ; Loehr, J.P. ; Kaspi, R.
Author_Institution :
Univ. of Central Florida, Orlando, FL, USA
Abstract :
Summary form only given.Soliton waveguiding effects have been investigated in an active double heterostructure diode structure employed as a nonlinear medium. It was observed that the nonlinearities due to reverse band filling in active semiconductor amplifiers give rise to a spectral region where self-focusing takes place for photon energies very slightly below the energy corresponding to the peak of the gain. The sample consisted of a standard double heterojunction GaAs-AlGaAs laser diode structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical self-focusing; optical solitons; optical waveguide theory; semiconductor lasers; waveguide lasers; GaAs-AlGaAs; GaAs-AlGaAs laser diode structure; active double heterostructure diode structure; nonlinear medium; nonlinearities; optically induced waveguiding; photon energies; reverse band filling; self-focusing; semiconductor optical amplifiers; soliton waveguiding effects; spectral region; standard double heterojunction; Etching; Nonlinear optics; Optical arrays; Optical pumping; Optical refraction; Optical solitons; Optical waveguides; Optimized production technology; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680060
