DocumentCode :
1906570
Title :
MOVPE on patterned substrates: a new fabrication method for nanometer structure devices
Author :
Galeuchet, Yvan D. ; Rothuizen, Hugo ; Roentgen, Peter
Author_Institution :
IBM Research Division, Zurich Research Laboratory, 8803 Rÿschlikon, Switzerland; Paul Scherrer Institute Zurich, Badenerstrasse 569, 8048 Zurich, Switzerland
fYear :
1991
fDate :
16-19 Sept. 1991
Firstpage :
667
Lastpage :
670
Abstract :
This work presents a new approach to fabricate buried GaInAs/InP nanostructures in a single growth step by metalorganic vapor-phase epitaxy (MOVPE) on patterned substrates. First, it is demonstrated that GaInAs layers can be buried in situ into InP by selective-area MOVPE. Then, it is shown that in situ-buried GaInAs/InP quantum dot arrays can be fabricated by this latter technique. These quantum dots are found to have a high luminescence efficiency, even at room temperature.
Keywords :
Epitaxial growth; Epitaxial layers; Fabrication; Indium phosphide; Luminescence; Nanoscale devices; Nanostructures; Quantum dots; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
Print_ISBN :
0444890661
Type :
conf
Filename :
5435248
Link To Document :
بازگشت