Title :
Programming Window Degradation in Flotox Eeprom Cells
Author :
Papadas, C. ; Ghibaudo, Gerard ; Pananakakis, G. ; Riva, C. ; Ghezzi, P.
Author_Institution :
LPCS/ENSERG, URA CNRS 840, BP 257, 38016 Grenoble, FRANCE.
Abstract :
A theoretical model explaining the programming window degradation as a function of the number of Write/Erase cycles in FLOTOX EEPROM cells is proposed. The collapsing of the programming window is quantitatively related to the oxide charge build-up in the FLOTOX tunnel region as the cycling number increases. The simplicity of the model permits a direct application at CAD level to be expected.
Keywords :
Capacitance; Capacitors; Coupling circuits; Degradation; EPROM; Equivalent circuits; Functional programming; Microelectronics; Pulse circuits; Voltage control;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
