Title :
High-sensitivity, high-dynamic range 768 × 576 pixel CMOS image sensor
Author :
Brockherde, W. ; Bussmann, A. ; Nitta, C. ; Hosticka, B.J. ; Wertheimer, R.
Author_Institution :
Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
Abstract :
This communication describes a high-sensitivity, high dynamic range 768×576 pixel image sensor fabricated in 0.5 μm standard CMOS technology and its design. The pixel pitch is 10 μm×10 μm with a fill factor of 50% while the chip area is 90 mm2. The dynamic range is 118 dB while the measured noise equivalent exposure is 66 pJ/cm2 at 635 nm wavelength. This yields a sensitivity of just 4.9 ml× at 20 ms integration time which makes it also suitable for night vision applications.
Keywords :
CMOS image sensors; night vision; 0.5 micron; 10 micron; 20 ms; 442368 pixel; 576 pixel; 635 nm; 768 pixel; CMOS image sensor; dynamic range; high-dynamic range image sensor; high-sensitivity image sensor; night vision; noise equivalent exposure; pixel fill factor; pixel pitch; CMOS image sensors; CMOS technology; Communication standards; Dynamic range; Image sensors; Night vision; Noise measurement; Pixel; Semiconductor device measurement; Wavelength measurement;
Conference_Titel :
Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European
Print_ISBN :
0-7803-8480-6
DOI :
10.1109/ESSCIR.2004.1356705
