Title :
Triggering and sustaining of snaphack in MOSFETs
Author :
Skotnicki, Tomasz ; Merckel, Gerard ; Denat, Christian
Author_Institution :
Centre National d´´Etudes des Télécommunications (CNET-CNS), B.P. 98, 28, chemin du Vieux Chêne, 38243 Meylan, France.
Abstract :
This paper analyses the phenomenon of snapback (negative resistance portion of the output characteristic) in MOSFETs. It shows that the expansion of the base of the parasitic bipolar transistor provides the necessary basis for the understanding of the snapback mechanism. It also offers simple criteria for the snapback triggering and sustaining which have been lacking to date.
Keywords :
Bipolar transistors; Current measurement; EPROM; Electrical resistance measurement; Electrostatic discharge; Equivalent circuits; MOSFETs; Microelectronics; Paramagnetic resonance; Physics;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
