• DocumentCode
    1907288
  • Title

    Borosilicate glass and its applications in bipolar technology

  • Author

    Bianco, M. ; Ehinger, K. ; Hautke, B. ; Klose, H. ; Philipsborn, H.v.

  • Author_Institution
    Siemens AG, Corporate Research, Otto-Hahn-Ring 6, 8000 Munich 83, FRG; Universitÿt Regensburg, NWF II, Physik, Universitÿtsstr. 31, 8400 Regensburg, FRG
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    525
  • Lastpage
    528
  • Abstract
    Borosilicate glass (SiOB) and its outdiffusion properties were investigated. The outdiffusion of boron can be controlled by using an intermediate oxide layer. Borosilicate glass can be used to realize sub 100 nm base widths for bipolar transistors. By using SiOB instead of TEOS for the spacer of PSA transistors, the base link is improved.
  • Keywords
    Bipolar transistors; Boron; CMOS technology; Etching; Glass; Ion implantation; Microelectronics; Rapid thermal annealing; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907288