Title :
High frequency precision modelling of CMOS-based translinear CCCII-
Author :
Meechuea, Norathadpong ; Chipipop, Boonruk ; Chaisricharoen, Roungsan ; Sirinaovakul, Booncharoen
Author_Institution :
Dept. of Comput. Eng., Univ. of Technol. Thonburi, Bangkok, Thailand
Abstract :
Recently, a minus-type second-generation current-controlled conveyer (CCCII-) was introduced. The method implementing used CMOS-based technology. Some parasitic capacitances and resistances were ignored in the previous models. This paper presents the high frequency modelling that uses MOSFET equivalent circuit with all parasitic capacitances. This includes the investigating high frequency characteristics of translinear CCCII-. The symbolic mathematical analysis technique via MATLAB program is used to find transfer function for comparing of two modelling; Fabre´s outside-in modelling and equivalent circuit modelling. Implementing CMOS CCCII- based on the MOSIS IBM 90nm RF CMOS BSIM4 level-54 process with HSPICE simulations is used under ±1.2V supply voltages.
Keywords :
CMOS integrated circuits; MOSFET circuits; current conveyors; equivalent circuits; mathematical analysis; transfer functions; CMOS-based translinear CCCII technology; Fabre outside-in modelling; HSPICE simulations; MOSFET equivalent circuit; MOSIS IBM RF CMOS BSIM4 level-54 process; Matlab program; equivalent circuit modelling; high frequency precision modelling; minus-type second-generation current-controlled conveyer; parasitic capacitances; parasitic resistances; size 90 nm; symbolic mathematical analysis technique; transfer function; Capacitance; Equivalent circuits; Integrated circuit modeling; MOSFET; Mathematical model; Semiconductor device modeling; Transfer functions; CCCII; CMOS; high frequency modelling; minus-type; translinear;
Conference_Titel :
Communications and Information Technologies (ISCIT), 2013 13th International Symposium on
Conference_Location :
Surat Thani
Print_ISBN :
978-1-4673-5578-0
DOI :
10.1109/ISCIT.2013.6645964
