Title :
Spin-related tunneling in lithographically-defined silicon quantum dots
Author :
Kodera, T. ; Yamahata, G. ; Kambara, T. ; Horibe, K. ; Uchida, K. ; Marcus, C.M. ; Oda, S.
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.
Keywords :
carrier density; elemental semiconductors; lithography; semiconductor quantum dots; silicon; tunnelling; Si; carrier density; device structure; lithographically-defined electrically-tunable quantum dots; spin-related tunneling; Electric potential; Logic gates; Scanning electron microscopy; Silicon; Temperature measurement; Tunneling; Voltage measurement;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562576
