• DocumentCode
    1908121
  • Title

    Multi-bit electromechanical memory cell for simple fabrication process

  • Author

    Lee, Kwangseok ; Choi, Woo Young

  • Author_Institution
    Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we propose a novel electromechanical memory cell (T cell). The T cell has been demonstrated successfully by the experimental results of its prototype cell. Also, the operation of a unit cell and that of array have been investigated. The T cell is superior to the previously reported H cell in terms of fabrication process complexity since the T cell needs only two metal layers.
  • Keywords
    circuit complexity; random-access storage; H cell; T cell; fabrication process complexity; metal layer; multibit electromechanical nonvolatile memory cell; unit cell; Arrays; Fabrication; Hysteresis; Metals; Nonvolatile memory; Prototypes; Structural beams;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562579
  • Filename
    5562579