DocumentCode
1908121
Title
Multi-bit electromechanical memory cell for simple fabrication process
Author
Lee, Kwangseok ; Choi, Woo Young
Author_Institution
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
fYear
2010
fDate
13-14 June 2010
Firstpage
1
Lastpage
2
Abstract
In this paper, we propose a novel electromechanical memory cell (T cell). The T cell has been demonstrated successfully by the experimental results of its prototype cell. Also, the operation of a unit cell and that of array have been investigated. The T cell is superior to the previously reported H cell in terms of fabrication process complexity since the T cell needs only two metal layers.
Keywords
circuit complexity; random-access storage; H cell; T cell; fabrication process complexity; metal layer; multibit electromechanical nonvolatile memory cell; unit cell; Arrays; Fabrication; Hysteresis; Metals; Nonvolatile memory; Prototypes; Structural beams;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-7727-2
Electronic_ISBN
978-1-4244-7726-5
Type
conf
DOI
10.1109/SNW.2010.5562579
Filename
5562579
Link To Document