• DocumentCode
    1908216
  • Title

    The effect of hole leakage and Auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers

  • Author

    Ikyo, Barnabas A. ; Marko, I.P. ; Hild, K. ; Adams, A.R. ; Arafin, Shamsul ; Amann, M.-C. ; Sweeney, S.J.

  • Author_Institution
    Dept. of Phys., Univ. of Surrey, Guildford, UK
  • fYear
    2013
  • fDate
    12-16 May 2013
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    In this work, temperature and hydrostatic pressure have been used independently to tune the bandgap of GaInAsSb type-I edge emitting lasers. The dependence of Jth, Auger current (JAuger) and radiative current (Jrad) on the band gap of these devices is presented.
  • Keywords
    Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; infrared sources; leakage currents; semiconductor lasers; thermo-optical devices; Auger current; Auger recombination; GaInAsSb-GaSb; band gap; hole leakage effect; hydrostatic pressure; midinfrared lasers; radiative current; temperature sensitivity; type-I edge emitting lasers; Gas lasers; Laser theory; Photonic band gap; Sensitivity; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4799-0593-5
  • Type

    conf

  • DOI
    10.1109/CLEOE-IQEC.2013.6800690
  • Filename
    6800690
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908216