DocumentCode
1908238
Title
Subthreshold currents in submicron N and PMOS and static consumption of SRAMs circuits made in thin film SOI
Author
Le Néel, O. ; Haond, M.
Author_Institution
Matra-MHS, route de Gachet, 44 087 Nantes Cedex 03, France
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
345
Lastpage
348
Abstract
We have studied the parameters influencing the subthreshold behaviour of both NMOS and PMOS devices made in thin (100nm) SOI film. Different LDD doses have been used and the influence of the background voltage is presented. Futhermore, the consequences on 4K SRAM (1¿m design rules) and 16K SRAM (0.7¿m design rules) circuits are discussed.
Keywords
Isolation technology; MOS devices; MOSFETs; Random access memory; Substrates; Subthreshold current; Thick film circuits; Thin film circuits; Threshold voltage; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435314
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