Title :
Subthreshold currents in submicron N and PMOS and static consumption of SRAMs circuits made in thin film SOI
Author :
Le Néel, O. ; Haond, M.
Author_Institution :
Matra-MHS, route de Gachet, 44 087 Nantes Cedex 03, France
Abstract :
We have studied the parameters influencing the subthreshold behaviour of both NMOS and PMOS devices made in thin (100nm) SOI film. Different LDD doses have been used and the influence of the background voltage is presented. Futhermore, the consequences on 4K SRAM (1¿m design rules) and 16K SRAM (0.7¿m design rules) circuits are discussed.
Keywords :
Isolation technology; MOS devices; MOSFETs; Random access memory; Substrates; Subthreshold current; Thick film circuits; Thin film circuits; Threshold voltage; Tungsten;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
