DocumentCode
1908247
Title
Investigation of interconnect effects in a transimpedance amplifier
Author
Shi, Xiaomeng ; Lu, Zhenghao ; Ma, Jianguo ; Li, Erping ; Yeo, Kiat Seng ; Do, Manh Anh
Author_Institution
Nanyang Technol. Univ.
fYear
2006
fDate
Feb. 27 2006-March 3 2006
Firstpage
586
Lastpage
589
Abstract
A novel interconnect model is used in the post layout simulation of a transimpedance amplifier working at 10 GB/s data rate. The unnegligible high frequency interconnect effects such as the inductive effect, skin effect, distributed effect, substrate losses, etc. have been considered in the model. Simulation result employing the proposed model is compared with that using conventional foundry provided RC interconnect model. Apparent discrepancy has been observed and the reason is analyzed
Keywords
amplifiers; losses; skin effect; distributed effect; inductive effect; interconnect effects; skin effect; substrate losses; transimpedance amplifier; Circuit simulation; Electronic design automation and methodology; Equivalent circuits; Foundries; Frequency; Integrated circuit interconnections; Integrated circuit modeling; RLC circuits; Semiconductor device modeling; Skin effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, 2006. EMC-Zurich 2006. 17th International Zurich Symposium on
Conference_Location
Singapore
Print_ISBN
3-9522990-3-0
Type
conf
DOI
10.1109/EMCZUR.2006.215002
Filename
1629692
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