Propagation layers for intra-chip wireless interconnection compatible with packaging and heat removal

Author

Xiaoling Guo ; Caserta, J. ; Li, R. ; Floyd, B. ; O, K.O.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

fYear

2002

fDate

11-13 June 2002

Firstpage

36

Lastpage

37

Abstract

Inserting an aluminum nitride (AlN) layer which acts as a dielectric propagating medium between a silicon wafer containing integrated antennas and a metal chuck emulating the role of a heat sink improves the antenna power transmission gain by /spl sim/8 dB at 15 GHz. AlN, with its high thermal conductivity, also alleviates the heat removal problem. With a 760-/spl mu/m AlN layer, an on-chip wireless connection is demonstrated over a 2.2-cm distance, which is 3/spl times/ the previously reported separation.

Keywords

aluminium compounds; cooling; dielectric thin films; heat sinks; integrated circuit interconnections; integrated circuit packaging; microwave antennas; thermal conductivity; thermal management (packaging); transmitting antennas; 15 GHz; 2.2 cm; 760 micron; aluminum nitride dielectric propagating medium; antenna power transmission gain; connection distance; heat removal compatibility; heat sink emulation; integrated antennas; intra-chip wireless interconnection; metal chuck; on-chip wireless connection; packaging compatibility; propagation layers; silicon wafer; thermal conductivity; Aluminum nitride; Antennas and propagation; Dielectrics; Gain; Heat sinks; Packaging; Power transmission; Silicon; Thermal conductivity; Transmitting antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7312-X

Type

conf

DOI

10.1109/VLSIT.2002.1015378

Filename

1015378