Title :
Incorporation of a tungsten pedestal structure into the nanotriode device
Author :
Blackburn, A.M. ; Hasko, D.G. ; Williams, D.A. ; Ahmed, H.
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
Abstract :
In this paper, the nanotriode fabrication process has been modified to incorporate a pedestal for the nanopillars, which increases the dielectric surface leakage gap, whilst maintaining the extractor-nanopillar gap.
Keywords :
leakage currents; nanostructured materials; nanotechnology; sputter deposition; triodes; tungsten; W; dielectric surface leakage gap; extractor-nanopillar gap; nanotriode device; nanotriode fabrication process; tungsten pedestal structure; Aluminum; Dielectrics; Electrodes; Electron beams; Electron emission; Fabrication; Laboratories; Nanoscale devices; Nanostructures; Tungsten;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223008
