• DocumentCode
    1908333
  • Title

    Incorporation of a tungsten pedestal structure into the nanotriode device

  • Author

    Blackburn, A.M. ; Hasko, D.G. ; Williams, D.A. ; Ahmed, H.

  • Author_Institution
    Cavendish Lab., Cambridge Univ., UK
  • fYear
    2003
  • fDate
    7-11 July 2003
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    In this paper, the nanotriode fabrication process has been modified to incorporate a pedestal for the nanopillars, which increases the dielectric surface leakage gap, whilst maintaining the extractor-nanopillar gap.
  • Keywords
    leakage currents; nanostructured materials; nanotechnology; sputter deposition; triodes; tungsten; W; dielectric surface leakage gap; extractor-nanopillar gap; nanotriode device; nanotriode fabrication process; tungsten pedestal structure; Aluminum; Dielectrics; Electrodes; Electron beams; Electron emission; Fabrication; Laboratories; Nanoscale devices; Nanostructures; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-8181-9515-4
  • Type

    conf

  • DOI
    10.1109/IVMC.2003.1223008
  • Filename
    1223008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908333