Planar 100 GHz Silicon Detector Circuits

On high resistive silicon substrates Schottky barrier diodes have been monolithically integrated with planar antenna structures. The Schottky barrier diodes were fabricated on n⁺ diffusion regions with thin epitaxial layers grown by molecular beam epitaxy. Low series resistance (≪ 6 ¿), ideality factor of less than 1.1 and cut-off frequencies up to 1 THz have been achieved. The maximum sensitivity of the detector-was 90 mV/(mW cm^¿2) at 94 GHz.