Precise thickness control of NiSi by nitrogen ion-implantation for multi-gate strained Si channel metal S/D MOSFETs

SBH and T_silicide reduction is found to be beneficial for improving the current drive of a metal S/D FinFET especially for a SBH higher than around 0.2 eV by the simulation. The precise control of NiSi thickness with keeping smooth interface was demonstrated by the nitrogen pre-implanted silicidation technique adopted for the strained-Si channel tri-gated MOSFETs having dopant-segregated NiSi contacts. The MOSFETs exhibited lower leakage current and on-resistance than those fabricated without using this technique due to the suppression of the encroachment defects and over silicidation. The present results suggest that this technique can be a solution of silicide formation for multi-gate MOSFET.