Design and simulation of AlGaN/GaN HFET

Author

Nirmal, D. ; Varughese, Shevin Bobin ; Joy, Doreen ; Princess, Flavia ; Kumar, P. Vijaya

Author_Institution

Dept. of ECE, Karunya Univ., Coimbatore, India

fYear

2012

fDate

15-16 March 2012

Firstpage

199

Lastpage

201

Abstract

GaN material has a very good potential in today´s semiconductor world because of its highlighted characters like wide band gap and high saturation velocity. The combined effect of piezoelectric polarization and spontaneous polarization provides a high electron concentration called 2DEG in Al_0.3Ga_0.7N/GaN interface which allows higher mobility of carriers in interface than in bulk GaN material. 2-D simulation of power Al_0.3Ga_0.7N/GaNHFET device is carried out here and the effect of different parameters are analysed and studied using Sentaurus TCAD software. Prameters like I_dV_g, I_dV_d, g_metc are obtained. Several analysis are done with source to gate length, passivation layer etc.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; two-dimensional electron gas; wide band gap semiconductors; 2DEG; AlGaN-GaN; GaN material; HFET; Sentaurus TCAD software; high electron concentration; high saturation velocity; piezoelectric polarization; spontaneous polarization; wide band gap; Gallium nitride; Logic gates; Performance evaluation; Photonic band gap; Piezoelectric polarization; HFET; Heterostucture; Lsg; Schottky barrier height; TCAD;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICDCS), 2012 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4577-1545-7

Type

conf

DOI

10.1109/ICDCSyst.2012.6188704

Filename

6188704