Title :
Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs
Author :
Gámiz, F. ; Roldán, J.B. ; López-Villanueva, J.A. ; Carceller, J.E.
Author_Institution :
Universidad de Granada, Spain
fDate :
22-24 September 1997
Keywords :
Acoustic scattering; Carrier confinement; Electron mobility; MOSFETs; Monte Carlo methods; Phonons; Rough surfaces; Semiconductor films; Silicon on insulator technology; Surface roughness;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194402
