DocumentCode
1908969
Title
Realisation of a 0.1 um vertical MOSFET with a SiGe source
Author
Hall, S. ; Wu, Z.Y.
Author_Institution
University of Liverpool, United Kingdom
fYear
1997
fDate
22-24 September 1997
Firstpage
228
Lastpage
231
Keywords
Epitaxial growth; Etching; Germanium silicon alloys; MOSFET circuits; Molecular beam epitaxial growth; Oxidation; Plasma applications; Plasma sources; Plasma temperature; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194407
Filename
1503337
Link To Document