• DocumentCode
    1909010
  • Title

    Lateral Channel Doping Engineering in 0.1um Recessed Channel nMOSFETs

  • Author

    Lyu, Jeongho ; Choi, Youngjin ; Park, Byung-Gook ; Chun, Kukjin ; Lee, Jong Duk

  • Author_Institution
    Seoul National University, Korea
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    236
  • Lastpage
    239
  • Keywords
    Degradation; Doping profiles; Fabrication; Immune system; MOSFETs; Medical simulation; Semiconductor device doping; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194409
  • Filename
    1503339