DocumentCode
1909010
Title
Lateral Channel Doping Engineering in 0.1um Recessed Channel nMOSFETs
Author
Lyu, Jeongho ; Choi, Youngjin ; Park, Byung-Gook ; Chun, Kukjin ; Lee, Jong Duk
Author_Institution
Seoul National University, Korea
fYear
1997
fDate
22-24 September 1997
Firstpage
236
Lastpage
239
Keywords
Degradation; Doping profiles; Fabrication; Immune system; MOSFETs; Medical simulation; Semiconductor device doping; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194409
Filename
1503339
Link To Document