Self-aligned metallization of high-frequency BJT ´ s with low-stress silicon-nitride spacers

Author

van Zeijl, H.W. ; Nanver, L.K.

Author_Institution

Delft University of Technology, The Netherlands

fYear

1997

fDate

22-24 Sept. 1997

Firstpage

248

Lastpage

251

Keywords

Annealing; Electrodes; Etching; Metallization; Planarization; Plasma applications; Resists; Silicon compounds; Stress; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Conference_Location

Stuttgart, Germany

Print_ISBN

2-86332-221-4

Type

DOI

10.1109/ESSDERC.1997.194412

Filename

1503342

Link To Document