• DocumentCode
    1909262
  • Title

    A silicon gated field edge cathode

  • Author

    Dyuzhev, N.A. ; Beliaev, S.N. ; Vlasenko, V.A. ; Gogin, A.A. ; Gontar, V.M. ; Deniskin, V.V. ; Mazaev, A.A. ; Nevsky, A.B. ; Tishin, Y.I. ; Shokin, A.N.

  • fYear
    2003
  • fDate
    7-11 July 2003
  • Firstpage
    177
  • Lastpage
    178
  • Abstract
    In this paper, we discuss the peculiarities of the design and technology of the Silicon Gated Field Edge Cathode on the hole silicon. Such cathodes have been formed with the help of the CMOS technology of plasma etching with the thermal oxidation.
  • Keywords
    cathodes; elemental semiconductors; oxidation; silicon; sputter etching; CMOS technology; Si; hole silicon; plasma etching; silicon gated field edge cathode; thermal oxidation; Anodes; CMOS technology; Cathodes; Circuits; Cities and towns; Electron emission; Optical scattering; Silicon; Space charge; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-8181-9515-4
  • Type

    conf

  • DOI
    10.1109/IVMC.2003.1223041
  • Filename
    1223041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909262