• DocumentCode
    1909294
  • Title

    Rapid thermal annealing of metastable and stable Si/Si1-xGex heterojunction bipolar transistors

  • Author

    Shafi, Z.A. ; Martin, A.S.R. ; Whitehurst, J. ; Ashburn, P. ; Godfrey, D J ; Gibbings, C.J. ; Post, I R C ; Tuppen, C.G. ; Booker, G.R. ; Jones, M.E.

  • Author_Institution
    Dept. of Electronics & Computer Science, University of Southampton, S09 5NH, ENGLAND
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si1-xGex HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reducingE/B depletion region recombination), the collector current is degraded by the out-diffusion of boron from the base, creating parasitic barriers to injection. For some devices, the E/B depletion region recombination is reduced to such an extent that the base current is dominated by neutral base recombination.
  • Keywords
    Boron; Doping; Heterojunction bipolar transistors; Metastasis; Molecular beam epitaxial growth; Rapid thermal annealing; Rapid thermal processing; Simulated annealing; Temperature distribution; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1909294