Title :
A New Method for Verification of MOSFET Models Based on Device Parameter Variations
Author :
Kühn, C. ; Weber, W.
Author_Institution :
Institute of Electronics, Universit¨at der Bundeswehr, Germany
fDate :
22-24 September 1997
Keywords :
Capacitance; Doping profiles; Fluctuations; Gaussian distribution; Implants; MOS devices; MOSFET circuits; Measurement standards; Medical simulation; Semiconductor impurities;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194431
