Lateral spread of high energy P and B ions implanted in silicon along the [100] axis and in random direction

B and P ions were implanted along the [100] axis or at 70 tilt angle of silicon wafers covered by a sequence of 10¿m wide and 3¿m thick SiO2 stripes. The lateral penetration under the oxide layer, measured by two-dimensional spreading resistance technique, is higher for random than for channeled implants. With increasing the dose the lateral straggling of channeled implants increases due to the disorder introduced in the sample. The results are correlated wvith calculations obtained by the MARLOWE code.