Title :
Low-Cost CMOS Process with Complete Post-Gate Implantation Scheme
Author :
Kerber, M. ; Schwalke, U. ; Heinrich, R.
Author_Institution :
Siemens AG, Germany
fDate :
22-24 September 1997
Keywords :
CMOS process; CMOS technology; Costs; Doping profiles; Fabrication; Implants; MOS devices; MOSFETs; Optimized production technology; Oxidation;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194450
