DocumentCode :
1910161
Title :
Field emission properties of single crystal diamond emitters
Author :
Nishibayashi, Y. ; Ando, Y. ; Tatsumi, N. ; Namba, Atsushi ; Imai, T.
Author_Institution :
Itami R&D Labs., Sumitomo Electr. Ind. Ltd., Hyogo, Japan
fYear :
2003
fDate :
7-11 July 2003
Firstpage :
243
Lastpage :
244
Abstract :
In this paper we report on the field emission properties of single crystal diamond emitters, which are boron-doped emitters, ion implanted emitters and phosphorus-doped emitters.
Keywords :
aluminium; boron; diamond; electron field emission; elemental semiconductors; phosphorus; Al ion implanted emitters; C:Al; C:B; C:P; boron-doped emitters; field emission properties; phosphorus-doped emitters; single crystal diamond emitters; Artificial intelligence; Boron; Electrodes; Electron emission; Etching; Grain boundaries; Hydrogen; Plasma applications; Shape; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
Type :
conf
DOI :
10.1109/IVMC.2003.1223074
Filename :
1223074
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1910161
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