Title :
A Manufacturable 0.35 um BiCMOS using Self-Aligned Cobalt SilicideTechnology
Author :
Igarashi, T. ; Kubo, S. ; Suda, K. ; Nakashima, T. ; Ohtsu, Y. ; Yamawaki, M. ; Asai, S.
Author_Institution :
Mitsubishi Electric Corporation, Japan
fDate :
22-24 September 1997
Keywords :
BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Cobalt; Electrodes; Etching; Fabrication; Manufacturing; Protection;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194455
