Field electron emission from amorphous AlN and Cr doped AlN Films

In this paper, we presented field emission properties from amorphous AlN based films, which were reactively sputter-deposited on heavily boron-doped P-Si(100) wafers at room temperature in an atmosphere of argon and nitrogen. Both undoped and Cr-doped AlN films were prepared. The characteristics of the films are studied. The doping level of Cr was controlled through changing the number of Cr sheets arranged on the Al target. The Cr concentration in the doped film was determined by Rutherford backscattering spectroscopy, and some oxygen was detected in the films due to the unclean system. X-ray diffraction measurement shows that all the films are in nearly amorphous state.