• DocumentCode
    1910682
  • Title

    Physics and performances of accumulation-mode SOI p-MOSFET´s from low (77 K) to high (150-320°C) temperatures

  • Author

    Flandre, D. ; Terao, A. ; Loo, T. ; Colinge, J.-P.

  • Author_Institution
    Laboratoire de Microelectronique, Université Catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve Belgium; Senior Research Assistant of the National Fund for Scientific Research (FNRS), Belgium
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    803
  • Lastpage
    806
  • Abstract
    A theoretical analysis of the physics of accumulation-mode SOI p-MOSFET´s is supported by new experimental data at room temperature, then extended to low (77 K) and high (150-320°C) temperature domains. The electrical performances of these devices under such temperature conditions are discussed and shown to be compatible with circuit requirements.
  • Keywords
    Conductive films; Doping; Low voltage; MOSFET circuits; Microelectronics; Physics; Semiconductor films; Temperature measurement; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910682