Title :
Characteristics of nMOS/GAA (Gate-All-Around) Transistors neal Threshold
Author :
Francis, P. ; Terao, A. ; Flandre, D. ; Van de Wielc, F.
Author_Institution :
Laboratoire de Microélectronique, Université Catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve, Belgium.
Abstract :
Simulations of, drain Current and intrinsic gate capacitances of nMOS/GAA transistors are presented and compared with experimental results. On the basis of the insight they give into the unique behaviour of these devices, new hypotheses have emerged and yielded an analytical model valid around the threshold voltage.
Keywords :
Analytical models; Bridge circuits; Capacitance; Ice; MOS devices; MOSFETs; Microelectronics; Silicon on insulator technology; Threshold voltage; Topology;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
