Title :
Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology
Author :
Udrea, F. ; Chan, S.S.M. ; Thomson, J. ; Keller, S. ; Amaratunga, G.A.J. ; Millington, A.D. ; Waind, P.R. ; Crees, D.E.
Author_Institution :
University of Cambridge, UK
fDate :
22-24 September 1997
Keywords :
Breakdown voltage; Capacitors; Cathodes; Doping profiles; Dry etching; Electric breakdown; Geometry; Insulated gate bipolar transistors; Insulation; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194476
