Electro-Optic Characterization of InGaAs/InP MQW p-i-n Modulator Structures

For self electro-optic effect device applications, multiple quantum well modulator devices in the material system InGaAs/InP are studied. The applied experimental techniques are differential electrotransmission and photoluminescence with and without electric field. The optoelectronic properties of the modulators, including transport and recombination processes, are studied in the experiments. The theory describes the electric field dependence of respectively the confined state energies, overlap of electron-hole wavefunctions, the dielectric constants ϵ1 and ϵ of the multiple quantum well material and the differential electrotransmission spectra.