Title :
Quantum electron ad optoelectonic devices
Author :
Capasso, Federico
Author_Institution :
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Abstract :
Recent advances in quantum devices are reviewed. Transistors based on resonant tunneling promise to greatly reduce circuit complexity in certain analog and digital applications. Prototype multiplier and parity generator circuits which illustrate this point have been demonstrated. The final section of this paper discusses recent results on AlGaAs/GaAs quantum well infrared photodetectors (QWIP) and focal plane arrays and the potential of this technology vis-a-vis HgCdTe based detectors at ¿~10 ¿m.
Keywords :
Circuits; Complexity theory; Electrons; Gallium arsenide; Infrared detectors; Photodetectors; Prototypes; Resonant tunneling devices; Sensor arrays; Transistors;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
