DocumentCode :
1911433
Title :
Stress induced leakage current dependence on oxide thickness, technology and stress level
Author :
Scarpa, A. ; Ries, P. ; Ghibaudo, G. ; Paccagnella, A. ; Pananakakis, G. ; Brini, J. ; Ghidini, G. ; Papadas, C.
Author_Institution :
Università di Padova, Italy
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
592
Lastpage :
595
Keywords :
Current density; Degradation; Electrons; Kinetic theory; Leakage current; Microelectronics; Predictive models; Research and development; Stress measurement; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194498
Filename :
1503428
Link To Document :
بازگشت