Title :
Hot Carrier Reliability Characteristics of Ultra Short Channel CMOSFET´s
Author_Institution :
ULSI Laboratory, LG Semicon Co., #1, Hyangjeong, Hungduk, Cheongju 360-480, KOREA
Abstract :
Extensive reliability characteristics of ultra-short channel CMOS devices with various process conditions were investigated. We found that device scaling down to 0.1¿m is possible by optimizing doping profile and oxide thickness. We suggest that hot-carrier induced circuit lifetime (¿f/f=10%) is not a major constraint for Leff=0.1¿m at 1.5V operating bias.
Keywords :
CMOSFETs; Degradation; Electrons; Hot carriers; Impact ionization; Implants; Laboratories; MOSFET circuits; Ultra large scale integration; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
